فرن طلاء كربيد السيليكون CVD لنمو نصف الموصلات epi

فيديوهات أخرى
November 06, 2024
فئة الارتباط: آلة طلاء CVD
Brief: Discover the HTCVD Silicon Carbide CVD SIC Epitaxy Growth Furnace, designed for high-performance semiconductor epi growth. Featuring multiple temperature control zones, this furnace ensures uniform coating and rapid deposition rates up to 50 microns per hour. Ideal for carbon-based and ceramic-based materials, it’s engineered for efficiency and precision in semiconductor manufacturing.
Related Product Features:
  • Multiple temperature control zones ensure great temperature uniformity for consistent results.
  • Special deposition chamber design offers excellent sealing and anti-contamination performance.
  • Multiple deposition channels provide uniform gas flow, eliminating dead corners for perfect deposition surfaces.
  • Integrated treatment for tar, solid dust, and organic gases during the deposition process enhances cleanliness.
  • Designed to meet pressure vessel standards, ensuring safety and compliance with technical requirements.
  • Pre-tested and pre-accepted in the factory, including all pipelines and electrical connections for reliability.
  • Rapid cooling option available to significantly reduce production time and increase efficiency.
  • Comprehensive on-site training provided, covering operation, maintenance, and troubleshooting.
الأسئلة:
  • Are you a factory or trading company?
    We are a leading high-temperature vacuum furnace manufacturer in China with over 10 years of experience.
  • Do you offer customization or OEM services?
    Yes, our powerful R&D team and advanced equipment allow us to provide both standard and customizable furnace solutions tailored to client requirements.
  • What are your competitive advantages?
    Our advantages include quick response times, high-quality control, a stable supply chain, timely delivery, and excellent after-sales service.